Radiation performance of new semiconductor power devices for the LHC experiment upgrades
نویسندگان
چکیده
a INFN Milano, via Celoria 16, 20133 Milano (Italy) b INFN Padova, via Marzolo 8, 35131 Padova (Italy) c INFN Pavia, via Bassi 6, 27100 Pavia (Italy) d INFN Roma, p.le Aldo Moro 2, 00185 Roma (Italy) e ENEA UTTMAT, via Anguillarese 301, 00123 Santa Maria di Galeria, Roma (Italy) f INAF-IASF, via Bassini 15, 20133 Milano (Italy) g Dipartimento di Ingegneria Elettrica e dell’Informazione, University of Cassino and Southern Lazio,via Di Biasio 43, 03043 Cassino (Italy) h Dipartimento di Fisica, Università degli Studi di Milano, via Celoria 16, 20133 Milano (Italy) i Dept. of Information Engineering, University of Padova, via Gradenigo 6/A, 35131 Padova (Italy) j Dipartimento di Ingegneria dell’Informazione, University of Parma, viale G.P. Usberti 181/A, 43124 Parma (Italy) k FN S.p.A., SS35bis dei Giovi km 15, 15062 Bosco Marengo (Italy)
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